类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 输入电压-Nom | 配置 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | 输入电压(最大) | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 控制技术 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 供应电流-最大值(Isup) | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 开关频率-最大值 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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FW4604-TL-2W | ON Semiconductor | 数据表 | 22228 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE, NOT REC (Last Updated: 5 days ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | 540.001716mg | 43 ns | 6A 4.5A | 150°C TJ | Tape & Reel (TR) | 2015 | e3 | yes | 不用于新设计 | 1 (Unlimited) | EAR99 | Tin (Sn) | 1.8W | 8 | 2 | Dual | 7.5 ns | N and P-Channel | 39m Ω @ 6A, 10V | 490pF @ 10V | 9.1nC @ 10V | 42ns | 30V | N-CHANNEL AND P-CHANNEL | 40 ns | 4.5A | 20V | 6A | -30V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC2700UDM-7 | Diodes Incorporated | 数据表 | 33 In Stock | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | SILICON | 1.34A 1.14A | 2 | 28.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY, LOW THRESHOLD | 1.12W | DUAL | 鸥翼 | 260 | 40 | DMC2700UDM | 6 | 增强型MOSFET | 1.12W | 5.1 ns | N and P-Channel | SWITCHING | 400m Ω @ 600mA, 4.5V | 1V @ 250μA | 60.67pF @ 16V | 0.74nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 1.14A | 6V | 1.34A | 0.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.3mm | 3.1mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD75208W1015 | Texas Instruments | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 6-UFBGA, DSBGA | 6 | SILICON | 1.6A | 2 | 29 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e1 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 750mW | BOTTOM | BALL | 260 | 未说明 | CSD75208 | 2 | 增强型MOSFET | 9 ns | 2 P-Channel (Dual) Common Source | SWITCHING | 68m Ω @ 1A, 4.5V | 1.1V @ 250μA | 410pF @ 10V | 2.5nC @ 4.5V | 5ns | 20V | 11 ns | -1.6A | -800mV | -6V | 0.15Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 10 pF | 1mm | 1.5mm | 1.8mm | 2mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
QS5K2TR | ROHM Semiconductor | 数据表 | 99000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | SOT-23-5 Thin, TSOT-23-5 | 5 | SILICON | 2 | 21 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 100MOhm | 锡银铜 | 30V | 1.25W | 鸥翼 | 260 | 2A | 10 | *K2 | 5 | Dual | 增强型MOSFET | 1.25W | 8 ns | 2 N-Channel (Dual) Common Source | SWITCHING | 100m Ω @ 2A, 4.5V | 1.5V @ 1mA | 175pF @ 10V | 3.9nC @ 4.5V | 10ns | 10 ns | 2A | 1.5V | 12V | 2A | 30V | 8A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 850μm | 2.9mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
QS6M3TR | ROHM Semiconductor | 数据表 | 18000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 25 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 不用于新设计 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 360MOhm | 900mW | 鸥翼 | 260 | 1.5A | 10 | *M3 | 6 | Dual | 增强型MOSFET | 1.25W | N and P-Channel | SWITCHING | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 1.6nC @ 4.5V | 12ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 1.5A | 1.5V | 12V | -20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87335Q3D | Texas Instruments | 数据表 | 15000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 6W | 无铅 | 1 | 0.65mm | not_compliant | CSD87335 | 12V | 开关控制器 | 2 N-Channel (Dual) Asymmetrical | 27V | 1.9V @ 250μA | 脉宽调制 | 1050pF @ 15V | 7.4nC @ 4.5V | 20mA | 30V | BUCK | 1500kHz | Standard | 3.3mm | 3.3mm | 1.5mm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC8220K6-G | Microchip Technology | 数据表 | 3300 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 3 Weeks | 表面贴装 | 表面贴装 | 12-VFDFN Exposed Pad | 12 | SILICON | 4 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e4 | 活跃 | 2 (1 Year) | 12 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | DUAL | 无铅 | 260 | 40 | 不合格 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 2 N and 2 P-Channel | SWITCHING | 6 Ω @ 1A, 10V | 2.4V @ 1mA | 56pF @ 25V | 200V | N-CHANNEL AND P-CHANNEL | 7Ohm | 200V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS3626S | ON Semiconductor | 数据表 | 2548 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 90mg | SILICON | 17.5A 25A | 2 | 23 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 1W | R-PDSO-N6 | Dual | 增强型MOSFET | 2.5W | 排水源头 | 7 ns | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 5m Ω @ 17.5A, 10V | 2V @ 250μA | 1570pF @ 13V | 26nC @ 10V | 25A | 12V | 17.5A | 0.005Ohm | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.05mm | 5.1mm | 6.1mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSS84AKS,115 | Nexperia USA Inc. | 数据表 | 20 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 160mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 260 | 30 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 445mW | 2 P-Channel (Dual) | SWITCHING | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 36pF @ 25V | 0.35nC @ 5V | 50V | 8.5Ohm | 50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN6040SSDQ-13 | Diodes Incorporated | 数据表 | 69688 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.3W | 鸥翼 | 未说明 | 未说明 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 4.5A, 10V | 3V @ 250μA | 1287pF @ 25V | 22.4nC @ 10V | 60V | 5A | 5A | 0.04Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STL8DN10LF3 | STMicroelectronics | 数据表 | 5505 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 50.6 ns | -55°C~175°C TJ | Cut Tape (CT) | Automotive, AEC-Q101, STripFET™ III | 活跃 | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 70W | FLAT | STL8 | R-PDSO-F6 | Dual | 增强型MOSFET | 70W | DRAIN | 8.7 ns | 2 N-Channel (Dual) | SWITCHING | 35m Ω @ 4A, 10V | 3V @ 250μA | 970pF @ 25V | 20.5nC @ 10V | 9.6ns | 100V | 5.2 ns | 20A | 20V | 0.05Ohm | 100V | 31.2A | 190 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4892 | Alpha & Omega Semiconductor Inc. | 数据表 | 30 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | 活跃 | 1 (Unlimited) | 2W | 2W | 2 N-Channel (Dual) | 68m Ω @ 4A, 10V | 2.8V @ 250μA | 415pF @ 50V | 12nC @ 10V | 100V | 4A | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMA1028NZ | ON Semiconductor | 数据表 | 90 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | 40mg | SILICON | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 68MOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 20V | 1.4W | 3.7A | Dual | 增强型MOSFET | 1.4W | DRAIN | 8 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 68m Ω @ 3.7A, 4.5V | 1.5V @ 250μA | 340pF @ 10V | 6nC @ 4.5V | 8ns | 8 ns | 3.7A | 1V | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 750μm | 2mm | 2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
FDS6892A | ON Semiconductor | 数据表 | 731 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 26 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 18MOhm | 20V | 2W | 鸥翼 | 7.5A | Dual | 增强型MOSFET | 2W | 8 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 1333pF @ 10V | 17nC @ 4.5V | 15ns | 9 ns | 7.5A | 900mV | 12V | 20V | 30A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900 mV | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
QS6K1TR | ROHM Semiconductor | 数据表 | 14111 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 15 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 364MOhm | 30V | 900mW | 鸥翼 | 260 | 1A | 10 | *K1 | 6 | Dual | 增强型MOSFET | 1.25W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 238m Ω @ 1A, 4.5V | 1.5V @ 1mA | 77pF @ 10V | 2.4nC @ 4.5V | 7ns | 7 ns | 1A | 1.5V | 12V | 1A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF9395MTRPBF | Infineon Technologies | 数据表 | 5 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | DirectFET™ Isometric MC | 10 | SILICON | 1 | 76 ns | -40°C~150°C TJ | Tape & Reel (TR) | 2007 | HEXFET® | e3 | 最后一次购买 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 2.1W | BOTTOM | R-XBCC-N6 | Dual | 增强型MOSFET | 2.1W | DRAIN | 19 ns | 2 P-Channel (Dual) | SWITCHING | 7m Ω @ 14A, 10V | 2.4V @ 50μA | 3241pF @ 15V | 64nC @ 10V | 142ns | 30V | 121 ns | 14A | 20V | 75A | 0.007Ohm | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD85301Q2 | Texas Instruments | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | 6 | 9.695537mg | SILICON | 2 | 14 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 2.3W | 无铅 | CSD85301 | 2 | Dual | 增强型MOSFET | DRAIN | 6 ns | 2 N-Channel (Dual) | SWITCHING | 27m Ω @ 5A, 4.5V | 1.2V @ 250μA | 469pF @ 10V | 5.4nC @ 4.5V | 26ns | 20V | 15 ns | 5A | 10V | 5A | 0.039Ohm | 3.8 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 5V Drive | 800μm | 2mm | 2mm | 750μm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC4040SSD-13 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 6.8A | 2 | 53.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | HIGH RELIABILITY | 1.8W | DUAL | 鸥翼 | 260 | 40 | DMC4040 | 8 | AEC-Q101 | 增强型MOSFET | 2.14W | 6.9 ns | N and P-Channel | SWITCHING | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 1790pF @ 20V | 37.6nC @ 10V | 14.7ns | 40V | N-CHANNEL AND P-CHANNEL | 30.9 ns | 7.5A | 20V | 5.7A | 0.04Ohm | -40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
MMDF2C03HDR2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.1A 3A | 2 | 81 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 30V | 2W | DUAL | 鸥翼 | 260 | unknown | 2A | 40 | MMDF2C03HD | 8 | 不合格 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 70m Ω @ 3A, 10V | 3V @ 250μA | 630pF @ 24V | 16nC @ 10V | 18ns | N-CHANNEL AND P-CHANNEL | 194 ns | 4.1A | 1.7V | 20V | 0.07Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002PS,115 | Nexperia USA Inc. | 数据表 | 2515 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 10 ns | 150°C TJ | Cut Tape (CT) | 2010 | e3 | 活跃 | 1 (Unlimited) | 6 | 1.6Ohm | 逻辑电平兼容 | 420mW | 鸥翼 | 6 | Dual | 增强型MOSFET | 320mW | 3 ns | 420mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 4ns | 4 ns | 320mA | 20V | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QS6M4TR | ROHM Semiconductor | 数据表 | 9000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e1 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 8541.29.00.95 | 1.25W | 鸥翼 | 260 | 1.5A | 10 | *M4 | 6 | Dual | 增强型MOSFET | 1.25W | N and P-Channel | SWITCHING | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 1.6nC @ 4.5V | 12ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 1.5A | 1.5V | 12V | 0.245Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
QH8MA4TCR | ROHM Semiconductor | 数据表 | 24000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 2 | SILICON | 9A 8A | 2 | 150°C TJ | Cut Tape (CT) | 2015 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.5W | DUAL | 未说明 | 未说明 | R-PDSO-F8 | 增强型MOSFET | N and P-Channel | SWITCHING | 16m Ω @ 9A, 10V | 2.5V @ 1mA | 640pF @ 15V | 15.5nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 8A | 0.016Ohm | 30V | 3.5 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN4031SSDQ-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.42W | 未说明 | 未说明 | 1.42W | 2 N-Channel (Dual) | 31m Ω @ 6A, 10V | 3V @ 250μA | 945pF @ 20V | 18.6nC @ 10V | 40V | 5.2A | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF5810TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 6-TSOP | 2.9A | 2 | 62 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | Obsolete | 2 (1 Year) | SMD/SMT | 90MOhm | 150°C | -55°C | 960mW | IRF5810PBF | Dual | 960mW | 8.2 ns | 960mW | 2 P-Channel (Dual) | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250μA | 650pF @ 16V | 9.6nC @ 4.5V | 14ns | 20V | 53 ns | -2.9A | -1.2V | 12V | -20V | -20V | 650pF | 逻辑电平门 | 90mOhm | 90 mΩ | -1.2 V | 990.6μm | 3mm | 1.4986mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
STS4DPF20L | STMicroelectronics | 数据表 | 645 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 125 ns | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 80mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 低阈值 | -20V | 2W | 鸥翼 | 260 | -4A | 30 | STS4D | 8 | 增强型MOSFET | 2W | 25 ns | 1.6W | 2 P-Channel (Dual) | SWITCHING | 80m Ω @ 2A, 10V | 2.5V @ 250μA | 1350pF @ 25V | 16nC @ 5V | 35ns | 35 ns | 4A | 1.6V | 16V | 4A | 20V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.25mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |
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